Submicron electron-beam tester for VLSI circuits beyond the 4-Mb DRAM

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作者：
机构：
[1] Fox, F.
[2] Koelzer, J.
[3] Otto, J.
[4] Plies, E.
来源：
Fox, F. | 1600年 / 34期
关键词：
Integrated circuits; VLSI;
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页码：2 / 3
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