Effects of oxidation ambient and low temperature post oxidation anneal on the silicon/oxide interface structure and the electrical properties of the thin gate oxide

被引：0
|
作者：
Cho, Won-Ju [1 ]
Kim, Yeong-Cheol [1 ]
Kim, Eung-Soo [2 ]
Kim, Hong-Seok [1 ]
机构：
[1] LG Semicon Co., Ltd., 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 360-480, Korea, Republic of
[2] Dept. of Electronics Engineering, Pusan Univ. of Foreign Studies 55-1, Uam-dong, Nam-gu, Pusan, 608-738, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 1 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：12 / 16
相关论文
共 50 条
  • [41] Structural, electrical and optical properties of zinc oxide produced by oxidation of zinc thin films
    H. Kashani
    Journal of Electronic Materials, 1998, 27 : 876 - 882
  • [42] THE ROLE OF SACRIFICIAL OXIDATION ON THE INTEGRITY OF THIN (20 NM) GATE OXIDE
    AHMED, I
    NAGUIB, H
    GOMEZ, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C362 - C362
  • [43] EFFECTS OF OXIDATION CONDITIONS ON THE PROPERTIES OF TANTALUM OXIDE-FILMS ON SILICON SUBSTRATES
    PARK, SW
    IM, HB
    THIN SOLID FILMS, 1992, 207 (1-2) : 258 - 264
  • [44] Hydrothermal Fabrication and Catalytic Performance of Chromium Oxide for Low-concentration NO Oxidation at Ambient Temperature
    Wu Mei-Jian
    Gao Zhen-Yuan
    Yuan Jing
    Zhao Kun-Feng
    Cai Ting
    Yang Ling
    Zhang Tao
    He Dan-Nong
    JOURNAL OF INORGANIC MATERIALS, 2016, 31 (11) : 1191 - 1197
  • [45] EFFECTS OF PREOXIDATION AMBIENT IN VERY THIN THERMAL OXIDE ON SILICON
    RUZYLLO, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1677 - 1682
  • [46] Low-temperature polysilicon TFT with gate oxide grown by high-pressure oxidation
    Mitra, U.
    Chen, J.
    Khan, B.
    Stupp, Edward
    Electron device letters, 1991, 12 (07): : 390 - 392
  • [47] LOW-TEMPERATURE POLYSILICON TFT WITH GATE OXIDE GROWN BY HIGH-PRESSURE OXIDATION
    MITRA, U
    CHEN, J
    KHAN, B
    STUPP, E
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) : 390 - 392
  • [48] Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation
    Niimi, H
    Lucovsky, G
    SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 1529 - 1533
  • [49] Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
    Jinwon Lee
    Keon-Hee Lim
    Youn Sang Kim
    Scientific Reports, 8
  • [50] Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
    Lee, Jinwon
    Lim, Keon-Hee
    Kim, Youn Sang
    SCIENTIFIC REPORTS, 2018, 8
12345