Effects of oxidation ambient and low temperature post oxidation anneal on the silicon/oxide interface structure and the electrical properties of the thin gate oxide

被引：0
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作者：
Cho, Won-Ju [1 ]
Kim, Yeong-Cheol [1 ]
Kim, Eung-Soo [2 ]
Kim, Hong-Seok [1 ]
机构：
[1] LG Semicon Co., Ltd., 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 360-480, Korea, Republic of
[2] Dept. of Electronics Engineering, Pusan Univ. of Foreign Studies 55-1, Uam-dong, Nam-gu, Pusan, 608-738, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 1 A期
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页码：12 / 16
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