X-RAY DIFFRACTION STUDY AND ELECTRICAL CHARACTERIZATION OF BORON-IMPLANTED LOW-PRESSURE CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON LAYERS.

被引：0

作者：

Hendriks, M. ^{[1
]}

Delhez, R. ^{[1
]}

de Keijser, Th.H. ^{[1
]}

Radelaar, S. ^{[1
]}

Habraken, F.H.P.M. ^{[1
]}

Kuiper, A.E.T. ^{[1
]}

Boudewijn, P.R. ^{[1
]}

机构：

[1] Delft Univ of Technology, Lab of, Metallurgy, Delft, Neth, Delft Univ of Technology, Lab of Metallurgy, Delft, Neth

来源：

| 1600年 / 56期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] INFLUENCE OF DEPOSITION PRESSURE ON THE OUTPUT CHARACTERISTICS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
DIMITRIADIS, CA
COXON, PA
ECONOMOU, NA
APPLIED PHYSICS LETTERS, 1993, 63 (07) : 943 - 945
[32] STUDY OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED TUNGSTEN-SILICON INTERFACE - INTERFACIAL FLUORINE
CARLISLE, JA
CHOPRA, DR
DILLINGHAM, TR
GNADE, B
SMITH, G
JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2313 - 2320
[33] X-RAY PHOTOELECTRON DIFFRACTION OF (100)-ORIENTED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS ON SILICON (100)
SCHALLER, E
KUTTEL, OM
AEBI, P
SCHLAPBACH, L
APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1533 - 1534
[34] STRESS IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION POLYCRYSTALLINE SILICON THIN-FILMS DEPOSITED BELOW 0.1 TORR
BENITEZ, A
BAUSELLS, J
CABRUJA, E
ESTEVE, J
SAMITIER, J
SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 : 723 - 726
[35] Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition
Singh, MP
Thakur, CS
Shalini, K
Banerjee, S
Bhat, N
Shivashankar, SA
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5631 - 5637
[36] Grain boundary potential barrier inhomogeneities in low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors
Dimitriadis, CA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) : 1563 - 1565
[37] EFFECTS OF TEMPERATURE AND ELECTRICAL STRESS ON THE PERFORMANCE OF THIN-FILM TRANSISTORS FABRICATED FROM UNDOPED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON
DIMITRIADIS, CA
COXON, PA
APPLIED PHYSICS LETTERS, 1989, 54 (07) : 620 - 622
[38] INFLUENCE OF DEPOSITION PRESSURE ON THE BULK AND INTERFACE STATES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
DIMITRIADIS, CA
TASSIS, DH
ECONOMOU, NA
GIAKOUMAKIS, G
APPLIED PHYSICS LETTERS, 1994, 64 (20) : 2709 - 2711
[39] Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors
Dimitriadis, CA
Brini, J
Kamarinos, G
APPLIED PHYSICS LETTERS, 1997, 70 (07) : 880 - 882
[40] Study of stress in microwave plasma chemical vapor deposited diamond films using X-ray diffraction
Haque, MS
Naseem, HA
Malshe, AP
Brown, WD
CHEMICAL VAPOR DEPOSITION, 1997, 3 (03) : 129 - 135

← 1 2 3 4 5 →