X-RAY DIFFRACTION STUDY AND ELECTRICAL CHARACTERIZATION OF BORON-IMPLANTED LOW-PRESSURE CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON LAYERS.

被引：0

作者：

Hendriks, M. ^{[1
]}

Delhez, R. ^{[1
]}

de Keijser, Th.H. ^{[1
]}

Radelaar, S. ^{[1
]}

Habraken, F.H.P.M. ^{[1
]}

Kuiper, A.E.T. ^{[1
]}

Boudewijn, P.R. ^{[1
]}

机构：

[1] Delft Univ of Technology, Lab of, Metallurgy, Delft, Neth, Delft Univ of Technology, Lab of Metallurgy, Delft, Neth

来源：

| 1600年 / 56期

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[21] Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
1734, American Institute of Physics Inc. (87):
[22] STRUCTURAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT
HAJJAR, JJJ
REIF, R
ADLER, D
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 279 - 285
[23] MICROSTRUCTURE OF BORON-DOPED SILICON LAYERS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
BIELLEDASPET, D
MANSOURBAHLOUI, F
MARTINEZ, A
PIERAGGI, B
DAVID, MJ
DEMAUDUIT, B
OUSTRY, A
CARLES, R
LANDA, G
AJUSTRON, F
MAZEL, A
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THIN SOLID FILMS, 1987, 150 (01) : 69 - 82
[24] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR DEPOSITED AND THERMALLY GROWN SILICON NITRIDE FILMS.
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v. Oostrom, A.
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[25] THERMAL-CONDUCTIVITY OF HEAVILY DOPED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS
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[26] Modelling boron diffusion in heavily implanted low-pressure chemical vapor deposited silicon thin films during thermal post-implantation annealing
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THIN SOLID FILMS, 2009, 517 (06) : 1961 - 1966
[27] CHARACTERIZATION OF LOW-PRESSURE DEPOSITED DIAMOND FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY
CHOURASIA, AR
CHOPRA, DR
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THIN SOLID FILMS, 1990, 193 (1-2) : 1079 - 1086
[28] LARGE GRAIN POLYCRYSTALLINE SILICON BY LOW-TEMPERATURE ANNEALING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS
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[29] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS
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JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 404 - 415
[30] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DIAMOND HEXAGONAL SILICON IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON
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