Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions

被引：0
|
作者：
Martin, F. [1 ]
Aymerich, X. [1 ]
机构：
[1] Universitat Autonoma de Barcelona, Bellaterra, Spain
来源：
Microelectronics Journal | 1991年 / 22卷 / 7-8期
关键词：
Charge transport - Fowler-Nordheim injection conditions - MNOS devices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：5 / 17
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