New photobleachable positive resist for KrF excimer laser lithography

被引：0
|
作者：
Endo, Masayuki [1 ]
Tani, Yoshiyuki [1 ]
Sasago, Masaru [1 ]
Ogawa, Kazufumi [1 ]
Nomura, Noboru [1 ]
机构：
[1] Matsushita Electric Ind Co, Japan
来源：
| 1600年 / 27期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] KRF EXCIMER LASER PROCESS - LATERAL AND SURFACE MODIFICATION FOR ENHANCING RESIST CONTRAST
    MINAMIYAMA, T
    KUMAGAE, A
    SATO, K
    ITO, S
    NAKASE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6A): : 1928 - 1932
  • [42] NEW TECHNOLOGIES OF KRF EXCIMER-LASER LITHOGRAPHY SYSTEM IN 0.25 MICRON COMPLEX CIRCUIT PATTERNS
    SASAGO, M
    MATSUO, T
    YAMASHITA, K
    ENDO, M
    MATSUOKA, K
    KOIZUMI, T
    KATSUYAMA, A
    NOMURA, N
    IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (03) : 416 - 424
  • [43] Fabrication of 0.2 mu m hole patterns in KrF excimer laser lithography
    Asano, M
    Kawano, K
    Tanaka, S
    Onishi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2640 - 2641
  • [44] Monolayer halftone phase-shifting mask for KrF excimer laser lithography
    Iwabuchi, Yohko, 1600, (32):
  • [45] Photobleachable silicon-containing molecular resist for deep UV lithography
    Kim, Jin-Baek
    Ganesan, Ramakrishnan
    Choi, Jae-Hak
    Yun, Hyo-Jin
    Kwon, Young-Gil
    Kim, Kyoung-Seon
    Oh, Tae-Hwan
    JOURNAL OF MATERIALS CHEMISTRY, 2006, 16 (34) : 3448 - 3451
  • [46] KrF excimer laser process. Lateral and surface modification for enhancing resist contrast
    Minamiyama, Takayuki
    Kumagae, Akitoshi
    Sato, Kazuo
    Ito, Shin-ichi
    Nakase, Makoto
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (6 A): : 1928 - 1932
  • [47] Production-ready 2kHz KrF excimer laser for DUV lithography
    Myers, D
    Watson, T
    Das, P
    Padmabandu, GG
    Zambon, P
    Hofmann, T
    Partlo, W
    Hysham, C
    Dunning, R
    OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 : 1038 - 1049
  • [48] New KrF and ArF excimer lasers for advanced deep ultraviolet optical lithography
    Lambda Physik GmbH, Goettingen, Germany
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (8 A): : 4050 - 4054
  • [49] A novel bottom antireflective coating working for both KrF and ArF excimer laser lithography
    Wang, LA
    Chen, HL
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 141 - 144
  • [50] NEW ALIGNMENT SYSTEM FOR EXCIMER LASER LITHOGRAPHY
    YAMAMOTO, M
    TAKEUCHI, H
    SUGIYAMA, Y
    AOKI, S
    SATO, T
    INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 1992, 26 (01): : 60 - 61
12345