Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

被引:0
|
作者
Yi, Choong Hoon [1 ]
Yasui, Itaru [1 ]
Shigesato, Yuzo [1 ]
机构
[1] Univ of Tokyo, Tokyo, Japan
来源
| 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词
Semiconducting films;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] STUDY OF ANNEALED INDIUM TIN OXIDE-FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING
    MENG, LJ
    MACARICO, A
    MARTINS, R
    VACUUM, 1995, 46 (07) : 673 - 680
  • [32] Electrical and optical properties of indium tin oxide films prepared by pursed magnetron sputtering
    Chou, HW
    Lee, WJ
    Tsai, RY
    Fang, YK
    Chen, CC
    ADVANCES IN OPTICAL INTERFERENCE COATINGS, 1999, 3738 : 453 - 460
  • [33] Properties of annealed indium tin tantalum oxide films prepared by reactive magnetron sputtering
    Zhang, Bo
    INFORMATION ENGINEERING FOR MECHANICS AND MATERIALS RESEARCH, 2013, 422 : 70 - 74
  • [34] Ozone in reactive gas for producing tin-doped indium oxide films by DC reactive magnetron sputtering
    Alam, AHMZ
    Sasaki, K
    Hata, T
    THIN SOLID FILMS, 1996, 281 : 209 - 212
  • [35] Optical, structural and electrical properties of tin oxide films prepared by magnetron sputtering
    Karapatnitski, IA
    Mit', KA
    Mukhamedshina, DM
    Beisenkhanov, NB
    SURFACE & COATINGS TECHNOLOGY, 2002, 151 : 76 - 81
  • [36] Electrical properties of tin-doped indium oxide thin films prepared by a dip coating
    Seki, Y.
    Sawada, Y.
    Wang, M. H.
    Lei, H.
    Hoshi, Y.
    Uchida, T.
    CERAMICS INTERNATIONAL, 2012, 38 : S613 - S616
  • [37] Structure and internal stress of tin-doped indium oxide and indium-zinc oxide films deposited by DC magnetron sputtering
    Nishimura, Eriko
    Sasabayashi, Tomoko
    Ito, Noribiro
    Sato, Yasushi
    Utsumi, Kentaro
    Yano, Koki
    Kaijo, Akira
    Inoue, Kazuyoshi
    Shigesato, Yuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7806 - 7811
  • [38] Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films
    Meng, LJ
    dos Santos, MP
    APPLIED SURFACE SCIENCE, 1997, 120 (3-4) : 243 - 249
  • [39] Characterization of RF-enhanced DC sputtering to deposit tin-doped indium oxide thin films
    Futagami, T
    Shigesato, Y
    Yasui, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11): : 6210 - 6214
  • [40] Characterization of RF-enhanced DC sputtering to deposit tin-doped indium oxide thin films
    Univ of Tokyo, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (6210-6214):