Homogeneity of annealed and quenched LEC SI GaAs

被引：0
|
作者：
Hebei Inst of Technology, Tianjin, China [1 ]
机构：
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1996年 / 16卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
19
引用
收藏
页码：68 / 74
相关论文
共 50 条
  • [31] Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration
    Dubecky, F
    Darmo, J
    Hlavac, S
    Benovic, M
    Pikna, M
    Pelfer, PG
    Forster, A
    Kordos, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 377 (2-3): : 475 - 478
  • [32] RECRYSTALLIZATION BEHAVIOUR OF A SOLUTION-ANNEALED AND QUENCHED AL-MG-SI ALLOY
    BORCHERS, H
    WOITSCHE.A
    RUESS, F
    METALL, 1970, 24 (03): : 219 - &
  • [33] MAJOR IMPLANTATION-INDUCED DEFECTS IN CONVENTIONAL AND RAPID ANNEALED, SILICON IMPLANTED LEC-GROWN GAAS
    BINDAL, A
    WANG, KL
    CHANG, SJ
    STAFSUDD, OM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 222 - 225
  • [34] STOICHIOMETRY OF UNDOPED LEC GAAS
    TERASHIMA, K
    NISHIO, J
    OKADA, A
    WASHIZUKA, S
    WATANABE, M
    JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 463 - 468
  • [35] A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors
    Biggeri, U
    Borchi, E
    Bruzzi, M
    Eremin, V
    Leroy, C
    Li, Z
    Menichelli, D
    Pirollo, S
    Sciortino, S
    Verbitskaya, E
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) : 597 - 601
  • [36] INFLUENCE OF MELT COMPOSITION ON ELECTRON-MOBILITY IN SI-DOPED LEC GAAS
    FORNARI, R
    JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) : 433 - 440
  • [37] IMAGE-ANALYSIS OF EL2 DISTRIBUTIONS IN LEC GAAS SI MATERIALS
    FILLARD, JP
    MONTGOMERY, P
    BAROUDI, A
    BONNAFE, J
    GALL, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02): : L258 - L259
  • [38] CHARACTERISTICS OF ANNEALED P/N JUNCTIONS BETWEEN GAAS AND SI(100)
    UNLU, MS
    MUNNS, G
    CHEN, J
    WON, T
    UNLU, H
    MORKOC, H
    RADHAKRISHNAN, G
    KATZ, J
    VERRET, D
    APPLIED PHYSICS LETTERS, 1987, 51 (24) : 1995 - 1997
  • [39] Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:: a thermochemical approach
    Korb, J
    Flade, T
    Jurisch, M
    Köhler, A
    Reinhold, T
    Weinert, B
    JOURNAL OF CRYSTAL GROWTH, 1999, 198 : 343 - 348
  • [40] SI-DOPING EFFECT ON ELECTRICAL-PROPERTIES OF LEC-GAAS CRYSTALS
    FORNARI, R
    ZANOTTI, L
    ZUCCALLI, G
    MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 307 - 314
12345