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- [25] Study of As precipitates in LEC SI-GaAs wafer by Raman probe MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 139 - 142
- [26] Annealing studies on LEC grown Si undoped GaAs single crystals PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 304 - 307
- [27] EVALUATION OF MULTIPLE WAFER-ANNEALED LEC GAAS BY MESFETS, AB-ETCHING AND IR TOMOGRAPHY INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 311 - 316
- [28] ELECTRICAL CHARACTERISTICS OF MEV SI-IMPLANTED AND ANNEALED GAAS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 71 (04): : 392 - 398