Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 3卷 / 1471期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] SELECTIVE HETEROEPITAXIAL GROWTH OF SI1-XGEX USING GAS SOURCE MOLECULAR-BEAM EPITAXY
    HIRAYAMA, H
    HIROI, M
    KOYAMA, K
    TATSUMI, T
    APPLIED PHYSICS LETTERS, 1990, 56 (12) : 1107 - 1109
  • [42] GROWTH OF SI1-XGEX HETEROSTRUCTURES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
    OHTANI, N
    MOKLER, SM
    XIE, MH
    ZHANG, J
    ZHANG, X
    JOYCE, BA
    INTERNATIONAL JOURNAL OF OPTOELECTRONICS, 1994, 9 (02): : 193 - 203
  • [43] LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY
    FUKATSU, S
    USAMI, N
    SHIRAKI, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 895 - 898
  • [44] The Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxy of Si in GeH4
    Svetlov, S.P.
    Shengurov, V.G.
    Chalkov, V.Yu.
    Krasil'nik, Z.F.
    Andreev, B.A.
    Drozdov, Yu.N.
    Izvestiya Akademii Nauk. Ser. Fizicheskaya, 2001, 65 (02): : 203 - 207
  • [45] Vapor-liquid-solid growth of Si1-xGex and Ge/ Si1-xGex Axial Heterostructured Nanowires
    Minassian, Sharis
    Weng, Xiaojun
    Redwing, Joan M.
    SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 699 - 706
  • [46] Measuring Ge segregation by real-time stress monitoring during Si1-xGex molecular beam epitaxy
    Floro, JA
    Chason, E
    APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3830 - 3832
  • [47] Effects of H coverage on Ge segregation during Si1-xGex gas-source molecular beam epitaxy
    Kim, H.
    Taylor, N.
    Abelson, J.R.
    Greene, J.E.
    1997, (82)
  • [48] Effects of H coverage on Ge segregation during Si1-xGex gas-source molecular beam epitaxy
    Kim, H
    Taylor, N
    Abelson, JR
    Greene, JE
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6062 - 6066
  • [49] Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy
    Xie, MH
    Lees, AK
    Fernandez, JM
    Zhang, J
    Joyce, BA
    JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 336 - 342
  • [50] Surface phenomena and kinetics of Si1-xGex/Si (0<=x<1) growth by molecular beam epitaxy using Si2H6 and Ge/GeH4
    Zhang, FC
    Singh, J
    Bhattacharya, PK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2378 - 2380
12345