Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol B | / 3卷 / 1471期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
    Brunner, K.
    Dobler, H.
    Abstreiter, G.
    Schaefer, H.
    Lustig, B.
    Thin Solid Films, 1998, 321 : 245 - 250
  • [32] Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
    Liu, JP
    Liu, XF
    Li, JP
    Sun, DZ
    Kong, MY
    JOURNAL OF CRYSTAL GROWTH, 1997, 181 (04) : 441 - 445
  • [33] Effects of Ge on the nucleation and growth of Si1-xGex
    Yamaguchi, S
    Park, SK
    Sugii, N
    Nakagawa, K
    Miyao, M
    NUCLEATION AND GROWTH PROCESSES IN MATERIALS, 2000, 580 : 153 - 158
  • [34] Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
    Zou, LF
    Acosta-Ortíz, SE
    Zou, LX
    Regalado, LE
    Sun, DZ
    Wang, ZG
    REVISTA MEXICANA DE FISICA, 1998, 44 : 93 - 96
  • [35] Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy
    Re, M
    Scalese, S
    Mirabella, S
    Terrasi, A
    Priolo, F
    Rimini, E
    Berti, M
    Coati, A
    Drigo, A
    Carnera, A
    De Salvador, D
    Spinella, C
    La Mantia, A
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 749 - 755
  • [36] CHARACTERIZATION OF STRAIN IN SI1-XGEX SI MULTILAYERS AND SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    VANDEWALLE, GFA
    FREDRIKSZ, CW
    VANGORKUM, AA
    VANDENHEUVEL, RA
    BULLELIEUWMA, CWT
    VANIJZENDOORN, LJ
    PHILIPS JOURNAL OF RESEARCH, 1989, 44 (2-3) : 141 - 155
  • [37] Intense visible photoluminescence from molecular beam epitaxy porous Si1-xGex grown on Si
    Unal, B
    Bayliss, SC
    Phillips, P
    Parker, EHC
    THIN SOLID FILMS, 1997, 305 (1-2) : 274 - 279
  • [38] Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy
    Ihn, Soo-Ghang
    Song, Jong-In
    Kim, Young-Hun
    Lee, Jeong Yong
    Ahn, Il-Ho
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (03) : 384 - 389
  • [39] PHOTOLUMINESCENCE PROPERTIES OF STRAINED MOLECULAR-BEAM EPITAXY SI1-XGEX/SI MULTIQUANTUM WELLS
    NOEL, JP
    ROWELL, NL
    HOUGHTON, DC
    WANG, A
    PEROVIC, DD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 899 - 901
  • [40] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF SI1-XGEX LAYERS ON SI SUBSTRATES
    HANSSON, PO
    WERNER, JH
    TAPFER, L
    TILLY, LP
    BAUSER, E
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2158 - 2163
12345