Optical studies of resonant and non-resonant tunnelling in GaAs/ AlxGa1-xAs quantum wells

被引：0
|
作者：
Ispasoiu, R.G. [1 ]
Fox, A.M. [1 ]
Foxon, C.T. [1 ]
Cunningham, J.E. [1 ]
Jan, W.Y. [1 ]
机构：
[1] Univ of Oxford, Oxford, United Kingdom
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Electron resonance - Electron transport properties - Optical variables measurement - Photoluminescence - Semiconductor quantum wells - Solid state physics - Spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have used CW photoluminescence and photocurrent spectroscopy to study the vertical transport mechanisms in GaAs/AlxGa1-x As multiple quantum well p-i-n structures. In an x = 0.33 asymmetric coupled well sample we have observed resonant electron tunnelling through barriers as thick as 153 A above the transition field for spatially indirect recombination. In a superlattice with x = 0.4 we have observed both electron and hole resonant tunnelling. The temperature and intensity dependence of the photocurrent suggest that non-resonant tunnelling is assisted by charged impurity scattering below 100 K.
引用
收藏
页码：545 / 548
相关论文
共 50 条
  • [31] Comparison of optical and transport measurements of electron densities in GaAs/AlxGa1-xAs quantum wells
    Shields, AJ
    Osborne, JL
    Simmons, MY
    Ritchie, DA
    Pepper, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (06) : 890 - 896
  • [32] Quantum confined stark effect and optical absorption in AlxGa1-xAs/GaAs/AlxGa1-xAs single quantum well
    Panda, S
    Panda, BK
    Fung, S
    Beling, CD
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 194 (02): : 547 - 562
  • [33] Blocking of resonant tunneling by electron Bragg reflectors in GaAs/AlxGa1-xAs quantum well structures
    Lee, SC
    Malloy, KJ
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1175 - 1179
  • [34] Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types
    Chaouache, M
    Chtourou, R
    Charfi, FF
    Marzin, JY
    Bloch, J
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 21 (1-2): : 227 - 230
  • [35] Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1-xAs double heterostructure thin films under resonant and non-resonant probe conditions
    Kojima, Osamu
    Ohta, Shohei
    Kita, Takashi
    Isu, Toshiro
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (01)
  • [36] LOCALIZED AND EXTENDED STATES IN GAAS/ALXGA1-XAS SUPERLATTICES PROBED BY RESONANT OPTICAL-EXCITATION
    TUNCEL, E
    PAVESI, L
    MARTIN, D
    REINHART, FK
    PHYSICAL REVIEW B, 1988, 38 (02): : 1597 - 1600
  • [37] Localization of transverse optical phonons of GaAs in GaAs/AlxGa1-xAs periodic structures with paired quantum wells
    Milekhin, A.G.
    Pusep, Yu.A.
    Preobrazhenskii, V.V.
    Semyagin, B.R.
    Lubyshev, D.I.
    JETP Letters (Translation of JETP Pis'ma v Redaktsiyu), 1994, 59 (07):
  • [38] Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
    Phys Rev B, 23 (16994):
  • [39] A PHOTOCURRENT SPECTROSCOPY STUDY OF GAAS/ALXGA1-XAS QUANTUM-WELLS
    COLLINS, RT
    PLOOG, K
    VONKLITZING, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 986 - 987
  • [40] Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
    Ferreira, AC
    Holtz, PO
    Monemar, B
    Sundaram, M
    Campman, K
    Merz, JL
    Gossard, AC
    PHYSICAL REVIEW B, 1996, 54 (23): : 16994 - 16997
12345