Optical studies of resonant and non-resonant tunnelling in GaAs/ AlxGa1-xAs quantum wells

被引：0

作者：

Ispasoiu, R.G. ^{[1
]}

Fox, A.M. ^{[1
]}

Foxon, C.T. ^{[1
]}

Cunningham, J.E. ^{[1
]}

Jan, W.Y. ^{[1
]}

机构：

[1] Univ of Oxford, Oxford, United Kingdom

来源：

Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期

关键词：

Electron resonance - Electron transport properties - Optical variables measurement - Photoluminescence - Semiconductor quantum wells - Solid state physics - Spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have used CW photoluminescence and photocurrent spectroscopy to study the vertical transport mechanisms in GaAs/AlxGa1-x As multiple quantum well p-i-n structures. In an x = 0.33 asymmetric coupled well sample we have observed resonant electron tunnelling through barriers as thick as 153 A above the transition field for spatially indirect recombination. In a superlattice with x = 0.4 we have observed both electron and hole resonant tunnelling. The temperature and intensity dependence of the photocurrent suggest that non-resonant tunnelling is assisted by charged impurity scattering below 100 K.

引用

页码：545 / 548

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