Optical studies of resonant and non-resonant tunnelling in GaAs/ AlxGa1-xAs quantum wells

被引：0
|
作者：
Ispasoiu, R.G. [1 ]
Fox, A.M. [1 ]
Foxon, C.T. [1 ]
Cunningham, J.E. [1 ]
Jan, W.Y. [1 ]
机构：
[1] Univ of Oxford, Oxford, United Kingdom
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Electron resonance - Electron transport properties - Optical variables measurement - Photoluminescence - Semiconductor quantum wells - Solid state physics - Spectroscopy;
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摘要：
We have used CW photoluminescence and photocurrent spectroscopy to study the vertical transport mechanisms in GaAs/AlxGa1-x As multiple quantum well p-i-n structures. In an x = 0.33 asymmetric coupled well sample we have observed resonant electron tunnelling through barriers as thick as 153 A above the transition field for spatially indirect recombination. In a superlattice with x = 0.4 we have observed both electron and hole resonant tunnelling. The temperature and intensity dependence of the photocurrent suggest that non-resonant tunnelling is assisted by charged impurity scattering below 100 K.
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页码：545 / 548
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