共 50 条
- [1] Time-of-flight mass spectrometry of positive ions in helicon-wave excited high-density CF4 and C4F8 plasmas JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3A): : 1282 - 1286
- [2] Kinetics of radicals in CF4 and C4F8 electron cyclotron resonance plasmas JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08): : 5340 - 5345
- [3] Composition of positive ions in high-density H2 plasmas measured by time-of-flight mass spectrometry JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (11): : 7080 - 7085
- [4] Composition of Positive ions in High-Density H2 Plasmas Measured by Time-of-Flight Mass Spectrometry Yamaguchi, H., 1600, Japan Society of Applied Physics (42):
- [5] Kinetics of radicals in CF4 and C4F8 electron cyclotron resonance plasmas Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 8 (5340-5345):
- [6] Laser desorption time-of-flight mass spectrometry of fluorocarbon films synthesized by C4F8/H2 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 866 - 873
- [7] Positive ions in RF discharge plasmas of C4F8/Ar and C4F8/02 mixtures JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10): : 5730 - 5734
- [8] Decay processes of electrons in the afterglow of high-density CF4, c-C4F8 and CF4-H2 plasmas JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7B): : 4383 - 4388
- [10] Investigation of surface polymerization on silicon exposed to C4F8 helicon wave plasmas Thin Solid Films, 1999, 341 (01): : 184 - 187