Characteristics of deep submicron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors

被引：0
|
作者：
Ren, H. [1 ]
Hao, Y. [1 ]
Xue, L. [1 ]
机构：
[1] Microelectronics Institute, Xidian University, Xi'an, Shaanxi 710071, China
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期
关键词：
Computer simulation - Electric currents - Electric properties - Electron transport properties - Hot carriers - Hydrodynamics - Semiconductor device models - Semiconductor device structures - Surface properties - Temperature;
D O I：
10.1143/jjap.40.5893
中图分类号：
学科分类号：
摘要：
Based on the hydrodynamic energy transport model, the electrical characteristics of grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) are studied and compared with those of corresponding conventional planar PMOSFETs. The simulations reveal that the short-channel effect and drain-induced barrier lowering (DIBL) are absent in grooved-gate PMOSFETs, which have good hot-carrier effect immunity, but the drain current driving capability is lower than that in planar ones. Subsequently, the reasons for these differences between grooved-gate and planar PMOSFETs are analyzed from the viewpoint of interior physical parameter distribution. These parameters include surface potential, electric field, hot-carrier velocity, temperature and so forth.
引用
收藏
页码：5893 / 5899
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