Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain

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作者：

Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan ^{[1
]}

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来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 3064-3069期

关键词：

Compressive strain - High temperature stress - Negative bias temperature instability (NBTI) - SiN capping;

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[1] Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain
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Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan
不详
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