Effects of grain size and abrasive size of polycrystalline nano-particle ceria slurry on shallow trench isolation chemical mechanical polishing

被引：0
|
作者：
Kang, Hyun-Goo [1 ,2 ]
Katoh, Takeo [1 ]
Kim, Sung-Jun [1 ]
Paik, Ungyu [2 ]
Park, Hyung-Soon [3 ]
Park, Jea-Gun [1 ]
机构：
[1] Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea, Republic of
[2] Department of Ceramic Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea, Republic of
[3] Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon, Kyungki-do 467-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2004年 / 43卷 / 3 A期
关键词：
Ceria - CMP - Nanotopography - Oxide films - Secondary particle size - Shallow trench isolation;
D O I：
10.1143/jjap.43.l365
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Effect of ionic surfactants on shallow trench isolation for chemical mechanical polishing using ceria-based slurries
    Zhang, Lifei
    Xie, Lile
    Lu, Xinchun
    COGENT ENGINEERING, 2023, 10 (02):
  • [42] Control of Adhesion Force Between Ceria Particles and Polishing Pad in Shallow Trench Isolation Chemical Mechanical Planarization
    Seo, Jihoon
    Moon, Jinok
    Bae, Jae-Young
    Yoon, Kwang Seob
    Sigmund, Wolfgang
    Paik, Ungyu
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (06) : 4351 - 4356
  • [43] Effect of Particle Size of Ceria Coated Silica and Polishing Pressure on Chemical Mechanical Polishing of Oxide Film
    Kim, Hwan-Chul
    Lim, Hyung Mi
    Kim, Dae-Sung
    Lee, Seung-Ho
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2006, 7 (04) : 167 - 172
  • [44] Modification of electrokinetic behavior of CeO2 abrasive particles in chemical mechanical polishing for shallow trench isolation
    Kim, JP
    Yeo, JG
    Paik, U
    Jung, YG
    Park, JG
    Hackley, VA
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S197 - S200
  • [45] Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry
    Zhang, Zefang
    Liu, Weili
    Song, Zhitang
    APPLIED OPTICS, 2010, 49 (28) : 5480 - 5485
  • [46] Non-Prestonian Behavior of Rectangular Shaped Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Planarization
    Kim, Ye-Hwan
    Jung, Yeon-Gil
    Yoon, Gwang Seob
    Moon, Jinok
    Watanabe, Akira
    Naito, Makio
    Paik, Ungyu
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (03) : 2810 - 2814
  • [47] Chemical-mechanical polishing for shallow trench isolation: A new interpretation
    Sun, HJ
    Olewine, M
    Wall, R
    CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 3 - 10
  • [48] Surfactant effect on oxide-to-nitride removal selectivity of nano-abrasive ceria slurry for chemical mechanical polishing
    Park, JG
    Katoh, T
    Lee, WM
    Jeon, H
    Paik, U
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9A): : 5420 - 5425
  • [49] Effect of grain size and nano-particle on fatigue properties for α-iron
    Masuda, C
    ULTRAFINE GRAINED MATERIALS III, 2004, : 475 - 480
  • [50] Effects of slurry filter size on the chemical mechanical polishing (CMP) defect density
    Seo, YJ
    Kim, SY
    Choi, YO
    Oh, YT
    Lee, WS
    MATERIALS LETTERS, 2004, 58 (15) : 2091 - 2095
12345