Spatial distribution of SiO2 precipitates grown in silicon at laser induced centres

被引：0
|
作者：
Blums, Yu. [1 ]
机构：
[1] Riga Technical University, 1 Kalku str, LV-1658 Riga, Latvia
来源：
Solid State Phenomena | 1999年 / 69卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：339 / 343
相关论文
共 50 条
  • [21] Optical study of ultrathin SiO2 grown on hydrogenated silicon
    Szekeres, A
    Paneva, A
    Alexandrova, S
    Lisovskyy, I
    Litovchenko, V
    Mazunov, D
    VACUUM, 2002, 69 (1-3) : 355 - 360
  • [22] DEFECT CHARACTERIZATION IN MONOCRYSTALLINE SILICON GROWN OVER SIO2
    MCGINN, JT
    JASTRZEBSKI, LL
    CORBOY, JF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C100 - C100
  • [23] SPATIAL-DISTRIBUTION OF TRAPPED HOLES IN SIO2
    KHOSRU, QDM
    YASUDA, N
    TANIGUCHI, K
    HAMAGUCHI, C
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4738 - 4742
  • [24] Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon
    Chong, YF
    Pey, KL
    Wee, ATS
    Thompson, MO
    Tung, CH
    See, A
    APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3786 - 3788
  • [25] Density and spatial distribution of MERIE-like plasma induced defects in SiO2
    Paskaleva, A
    Novkovski, N
    Atanassova, E
    Pecovska-Gjorgjevich, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 199 (02): : 243 - 249
  • [26] Spatial distribution of electron-hole pairs induced by electrons and protons in SiO2
    Murat, M
    Akkerman, A
    Barak, J
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3211 - 3218
  • [27] DISTRIBUTION OF SIO2 PRECIPITATES IN LARGE, OXYGEN-RICH CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS AFTER ANNEALING AT 750-DEGREES-C
    BOUCHARD, R
    SCHNEIDER, JR
    GUPTA, S
    MESSOLORAS, S
    STEWART, RJ
    NAGASAWA, H
    ZULEHNER, W
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 553 - 562
  • [28] Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer
    T. S. Shamirzaev
    M. S. Seksenbaev
    K. S. Zhuravlev
    A. I. Nikiforov
    V. V. Ul’yanov
    O. P. Pchelyakov
    Physics of the Solid State, 2005, 47 : 82 - 85
  • [29] Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer
    Shamirzaev, TS
    Seksenbaev, MS
    Zhuravlev, KS
    Nikiforov, AI
    Ul'yanov, VV
    Pchelyakov, OP
    PHYSICS OF THE SOLID STATE, 2005, 47 (01) : 82 - 85
  • [30] THE ORIGIN OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATES
    ITSUMI, M
    TOMITA, M
    YAMAWAKI, M
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1940 - 1943
12345