Spatial distribution of SiO2 precipitates grown in silicon at laser induced centres

被引:0
|
作者
Blums, Yu. [1 ]
机构
[1] Riga Technical University, 1 Kalku str, LV-1658 Riga, Latvia
来源
Solid State Phenomena | 1999年 / 69卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:339 / 343
相关论文
共 50 条
  • [1] The spatial distribution of SiO2 precipitates grown in silicon at laser induced centres
    Blums, Y
    SOLID STATE PHENOMENA, 1999, 70 : 339 - 343
  • [2] Polycrystalline silicon precipitates on SiO2 using an argon excimer laser
    Ohmukai, M
    Takigawa, Y
    Kurosawa, K
    APPLIED SURFACE SCIENCE, 1999, 137 (1-4) : 78 - 82
  • [3] Polycrystalline silicon precipitates on SiO2 using an argon excimer laser
    Akashi Coll of Technology, Hyogo, Japan
    Appl Surf Sci, 1-4 (78-82):
  • [4] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
    HOBBS, A
    BARKLIE, RC
    REESON, K
    HEMMENT, PLF
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
  • [5] Amorphous SiO2 precipitates at silicon grain boundaries
    Duscher, G.
    Muellejans, H.
    Werner, J.
    Ruehle, M.
    Materials Science Forum, 1996, 207-209 (pt 2): : 713 - 716
  • [6] Amorphous SiO2 precipitates at silicon grain boundaries
    Duscher, G
    Mullejans, H
    Werner, J
    Ruhle, M
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2, 1996, 207- : 713 - 716
  • [8] ELECTRON MICRODIFFRACTION STUDIES OF NEW SIO2 PRECIPITATES IN SILICON
    KIM, Y
    SPENCE, JCH
    LONG, N
    BERGHOLZ, W
    OKEEFFE, M
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 419 - 422
  • [9] ELECTRON MICROSCOPIC OBSERVATIONS OF SIO2 PRECIPITATES AT DISLOCATIONS IN SILICON
    BIALAS, D
    HESSE, J
    JOURNAL OF MATERIALS SCIENCE, 1969, 4 (09) : 779 - &
  • [10] Enhanced oxidation of thermally grown SiO2 due to P precipitates
    Dastgheib-Shirazi, Amir
    Rinder, Johannes
    Micard, Gabriel
    Steyer, Michael
    Hahn, Giso
    Terheiden, Barbara
    PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016), 2016, 92 : 457 - 465