Observation of recording marks in phase-change media using scanning electron microscopy channelling contrast image

A technique for observing recording marks by SEM (scanning electron microscopy) channelling contrast imaging was proposed. In phase-change materials, the amorphous phases show less topographic change after the phase-change process, and we hard to be examined by SEM SEI (secondary electron image mode) imaging. Although these recording marks can be observed clearly by TEM (transmission electron microscopy), the TEM specimen preparation method is complicated. The SEM channelling contrast imaging technique provides an easier way to investigate the `distortion' of direct-overwrite amorphous marks in phase-change media.