Performances of phase-change recording disks based on GaSbTe media

被引：23
|
作者：
Lee, CM
Yen, WS
Chen, JP
Chin, TS
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 02期
关键词：
chalcogenide; dynamic testing; Ga-Sb-Te; optical disk; phase change;
D O I：
10.1109/TMAG.2004.842036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phase-change optical disks with novel GaSbTe recording media were prepared in the DVD+RW format and evaluated by a dynamic tester at 1X speed. The studied compositions locate along the Sb7Te3-GaSb and Sb2Te3-GaSb pseudo-binary tielines. The disks were prepared by an RF co-sputtering method. Enhanced recrystallization has been demonstrated in the disks with Sb7Te3 -rich recording layer. An approximated composition Ga2Sb5Te3 even exhibited a nearly complete erasure (CNR similar to 45 dB, de erasability similar to -40 dB). Relationship between the dynamic characteristics and crystal structure of the GaSbTe materials has been proposed.
引用
收藏
页码：1022 / 1024
页数：3
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