3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search

被引:0
|
作者
Yingjie YU [1 ]
Shengguang REN [1 ]
Ling YANG [1 ]
Yi LI [1 ,2 ]
Xiangshui MIAO [1 ,2 ]
机构
[1] School of Integrated Circuits, Huazhong University of Science and Technology
[2] Hubei Yangtze Memory
关键词
D O I
暂无
中图分类号
TP333 [存贮器];
学科分类号
摘要
<正>Ternary content addressable memory(TCAM) enables high-speed parallel in-situ pattern matching [1], serving as the key processing unit for an efficient in-memory search system, which is widely studied in areas such as routing, similarity computing, and brain-inspired learning.
引用
收藏
页码:405 / 406
页数:2
相关论文
共 50 条
  • [1] 3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search
    Yu, Yingjie
    Ren, Shengguang
    Yang, Ling
    Li, Yi
    Miao, Xiangshui
    SCIENCE CHINA-INFORMATION SCIENCES, 2025, 68 (03)
  • [2] In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory
    Lee, Jae Seong
    Yoon, Jisoo
    Choi, Woo Young
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 154 - 157
  • [3] In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory
    Yang, Ling
    Zhao, Ruizhe
    Li, Yi
    Tong, Hao
    Yu, Yingjie
    Miao, Xiangshui
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (07) : 1053 - 1056
  • [4] Self-Rectifying Memristors for Three-Dimensional In-Memory Computing
    Ren, Sheng-Guang
    Dong, A-Wei
    Yang, Ling
    Xue, Yi-Bai
    Li, Jian-Cong
    Yu, Yin-Jie
    Zhou, Hou-Ji
    Zuo, Wen-Bin
    Li, Yi
    Cheng, Wei-Ming
    Miao, Xiang-Shui
    ADVANCED MATERIALS, 2024, 36 (04)
  • [5] High-Speed Memristive Ternary Content Addressable Memory
    Gnawali, Krishna P.
    Tragoudas, Spyros
    IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING, 2022, 10 (03) : 1349 - 1360
  • [6] Memristor-transistor hybrid ternary content addressable memory using ternary memristive memory cell
    Khan, Masoodur Rahman
    Rashid, A. B. M. Harun-ur
    IET CIRCUITS DEVICES & SYSTEMS, 2021, 15 (07) : 619 - 629
  • [7] Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing
    Zhang, Guobin
    Wang, Zijian
    Fan, Xuemeng
    Wang, Zhen
    Li, Pengtao
    Luo, Qi
    Gao, Dawei
    Wan, Qing
    Zhang, Yishu
    APPLIED PHYSICS LETTERS, 2024, 125 (13)
  • [8] Lifelong Learning with Monolithic 3D Ferroelectric Ternary Content-Addressable Memory
    Dutta, S.
    Khanna, A.
    Ye, H.
    Sharifi, M. M.
    Kazemi, A.
    San Jose, M.
    Aabrar, K. A.
    Mir, J. G.
    Niemer, M.
    Hu, X. S.
    Datta, S.
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [9] 8F2 Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 x 105 Self-Rectifying Ratio
    Ding, Xiang
    Zhang, Huimin
    Wang, Xianggao
    Zhou, Xiaofeng
    Lee, ChoongHyun
    Zhao, Yi
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) : 833 - 836
  • [10] Static random-access memory with embedded arithmetic logic units for in-memory computing and ternary content addressable memory operation
    Lin, Zhiting
    Fan, Xing
    Yu, Shuiyue
    Peng, Chunyu
    Zhao, Qiang
    Wu, Xiulong
    ELECTRONICS LETTERS, 2022, 58 (25) : 963 - 965