3D self-rectifying memristive ternary content addressable memory for massive and exact in-memory search

被引:0
|
作者
Yingjie YU [1 ]
Shengguang REN [1 ]
Ling YANG [1 ]
Yi LI [1 ,2 ]
Xiangshui MIAO [1 ,2 ]
机构
[1] School of Integrated Circuits, Huazhong University of Science and Technology
[2] Hubei Yangtze Memory
关键词
D O I
暂无
中图分类号
TP333 [存贮器];
学科分类号
摘要
<正>Ternary content addressable memory(TCAM) enables high-speed parallel in-situ pattern matching [1], serving as the key processing unit for an efficient in-memory search system, which is widely studied in areas such as routing, similarity computing, and brain-inspired learning.
引用
收藏
页码:405 / 406
页数:2
相关论文
共 50 条
  • [11] Concealable physical unclonable function generation and an in-memory encryption machine using vertical self-rectifying memristors
    Cho, Jea Min
    Kim, Seung Soo
    Park, Tae Won
    Shin, Dong Hoon
    Kim, Yeong Rok
    Park, Hyung Jun
    Kim, Dong Yun
    Lee, Soo Hyung
    Park, Taegyun
    Hwang, Cheol Seong
    NANOSCALE HORIZONS, 2024, 10 (01) : 113 - 123
  • [12] 3-D Content Addressable Memory Architectures
    Hu, Yong-Jyun
    Li, Jin-Fu
    Huang, Yu-Jen
    2009 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN, AND TESTING, PROCEEDINGS, 2009, : 59 - 64
  • [13] Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure
    Son, Jeonghyeon
    Lee, Minsub
    Sannyal, Arindam
    Yun, Hojun
    Cheon, Jaehui
    Lee, Sumin
    Park, Jong S.
    Kang, Seok Ju
    Jang, Joonkyung
    Jeong, Beomjin
    ACS NANO, 2025, 19 (11) : 10796 - 10806
  • [14] FeFET Multi-Bit Content-Addressable Memories for In-Memory Nearest Neighbor Search
    Kazemi, Arman
    Sharifi, Mohammad Mehdi
    Laguna, Ann Franchesca
    Mueller, Franz
    Yin, Xunzhao
    Kaempfe, Thomas
    Niemier, Michael
    Hu, X. Sharon
    IEEE TRANSACTIONS ON COMPUTERS, 2022, 71 (10) : 2565 - 2576
  • [15] In-Memory Nearest Neighbor Search with FeFET Multi-Bit Content-Addressable Memories
    Kazemi, Arman
    Sharifi, Mohammad Mehdi
    Laguna, Ann Franchesca
    Mueller, Franz
    Rajaei, Ramin
    Olivo, Ricardo
    Kaempfe, Thomas
    Niemier, Michael
    Hu, X. Sharon
    PROCEEDINGS OF THE 2021 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2021), 2021, : 1084 - 1089
  • [16] A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy
    Han, Runze
    Shen, Wensheng
    Huang, Peng
    Zhou, Zheng
    Liu, Lifeng
    Liu, Xiaoyan
    Kang, Jinfeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [17] A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash
    Yang, H. Z.
    Huang, P.
    Han, R. Z.
    Xiang, Y. C.
    Feng, Y.
    Gao, B.
    Chen, J. Z.
    Liu, L. F.
    Liu, X. Y.
    Kang, J. F.
    2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2020, : 29 - 30
  • [18] A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash
    Yang, H. Z.
    Huang, P.
    Han, R. Z.
    Xiang, Y. C.
    Feng, Y.
    Gao, B.
    Chen, J. Z.
    Liu, L. F.
    Liu, X. Y.
    Kang, J. F.
    2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2020, : 39 - 40
  • [19] Content Addressable Memory Design in 3D pNML for Energy-Aware Sustainable Computing
    Pathak, Nirupma
    Bhoi, Bandan Kumar
    Misra, Neeraj Kumar
    Kumar, Santosh
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2022, 31 (10)
  • [20] Ternary content-addressable memory with MoS2 transistors for massively parallel data search
    Yang, Rui
    Li, Haitong
    Smithe, Kirby K. H.
    Kim, Taeho R.
    Okabe, Kye
    Pop, Eric
    Fan, Jonathan A.
    Wong, H-S Philip
    NATURE ELECTRONICS, 2019, 2 (03) : 108 - 114