Static random-access memory with embedded arithmetic logic units for in-memory computing and ternary content addressable memory operation

被引:1
|
作者
Lin, Zhiting [1 ]
Fan, Xing [1 ]
Yu, Shuiyue [1 ]
Peng, Chunyu [1 ]
Zhao, Qiang [1 ]
Wu, Xiulong [1 ]
机构
[1] Anhui Univ, Sch Integrated Circuits, Hefei, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Monte Carlo methods;
D O I
10.1049/ell2.12675
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In-memory computing (IMC) is a novel computing architecture that presents considerable potential in solving the data transmission and energy consumption problems faced by the von Neumann architecture. The compound Boolean logic operation (CBLO) is a crucial component of most advanced computing platforms. This study presents a static random-access memory array structure comprising configurable embedded arithmetic logic units (ALUs), which can realize four types of CBLOs within a single cycle. The proposed structure can also form the ternary content addressable memory (TCAM) for ternary searching by configuring signal lines and sense amplifiers. The authors performed 5000 trials of the Monte Carlo simulation for four types of CBLOs. The results of all four types were observed to be accurate, and the delay of the TCAM was observed to be as low as 141 ps, which improves the parallelism of IMC, reduces power consumption, and significantly reduces calculation delay.
引用
收藏
页码:963 / 965
页数:3
相关论文
共 50 条
  • [1] Research on Progress of Computing In-Memory Based on Static Random-Access Memory
    Lin Zhiting
    Xu Tian
    Tong Zhongzhen
    Wu Xiulong
    Wang Fangming
    Peng Chunyu
    Lu Wenjuan
    Zhao Qiang
    Chen Junning
    JOURNAL OF ELECTRONICS & INFORMATION TECHNOLOGY, 2022, 44 (11) : 4041 - 4057
  • [2] In-memory calculation with embedded arithmetic and logic units for deep neural network
    Yu, Shuiyue
    Fu, Jie
    Lin, Zhiting
    Peng, Chunyu
    Wu, Xiulong
    ELECTRONICS LETTERS, 2022, 58 (17) : 639 - 641
  • [3] In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory
    Ou, Qiao-Feng
    Xiong, Bang-Shu
    Yu, Lei
    Wen, Jing
    Wang, Lei
    Tong, Yi
    MATERIALS, 2020, 13 (16)
  • [4] In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory
    Lee, Jae Seong
    Yoon, Jisoo
    Choi, Woo Young
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 154 - 157
  • [5] CCD LINE ADDRESSABLE RANDOM-ACCESS MEMORY (LARAM)
    GUNSAGAR, KC
    GUIDRY, MR
    AMELIO, GF
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) : 268 - 273
  • [6] Fully Binarized Graph Convolutional Network Accelerator Based on In-Memory Computing with Resistive Random-Access Memory
    Zhang, Woyu
    Li, Zhi
    Zhang, Xinyuan
    Wang, Fei
    Wang, Shaocong
    Lin, Ning
    Li, Yi
    Wang, Jun
    Yue, Jinshan
    Dou, Chunmeng
    Xu, Xiaoxin
    Wang, Zhongrui
    Shang, Dashan
    ADVANCED INTELLIGENT SYSTEMS, 2024, 6 (07)
  • [7] TESTING METHOD FOR STATIC RANDOM-ACCESS MEMORY
    MADHAVEN, R
    ELECTRONIC ENGINEERING, 1977, 49 (596): : 22 - 22
  • [8] In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory
    Yang, Ling
    Zhao, Ruizhe
    Li, Yi
    Tong, Hao
    Yu, Yingjie
    Miao, Xiangshui
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (07) : 1053 - 1056
  • [9] Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing
    Shi, Yuhan
    Oh, Sangheon
    Huang, Zhisheng
    Lu, Xiao
    Kang, Seung H.
    Kuzum, Duygu
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1126 - 1129
  • [10] In-Memory Computing with Memristor Content Addressable Memories for Pattern Matching
    Graves, Catherine E.
    Li, Can
    Sheng, Xia
    Miller, Darrin
    Ignowski, Jim
    Kiyama, Lennie
    Strachan, John Paul
    ADVANCED MATERIALS, 2020, 32 (37)