Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate

被引：0
|
作者：
Yang, Weiming [1 ]
Shi, Chen [2 ]
Chen, Jianxin [2 ]
机构：
[1] Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[2] Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 04期
关键词：
7;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：503 / 508
相关论文
共 50 条
  • [31] A high linearity SiGe HBT LNA for GPS receiver
    Luo Yanbin
    Shi Jian
    Ma Chengyan
    Gan Yebing
    Qian Min
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
  • [32] Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier
    Bruce, SPO
    Rydberg, A
    Kim, M
    Beisswanger, FJ
    Luy, JF
    Schumacher, H
    Erben, U
    Willander, M
    Karlsteen, M
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) : 695 - 700
  • [33] A high linearity SiGe HBT LNA for GPS receiver
    罗彦彬
    石坚
    马成炎
    甘业兵
    钱敏
    Journal of Semiconductors, 2014, (04) : 96 - 101
  • [34] Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier
    Bruce, Staffan P.O.
    Rydberg, Anders
    Kim, Moonil
    Beisswanger, Frank J.
    Luy, J.-F.
    Schumacher, Hermann
    Erben, Uwe
    Willander, Magnus
    Karlsteen, Magnus
    IEEE Transactions on Microwave Theory and Techniques, 1998, 46 (5 pt 2): : 695 - 700
  • [35] Microwave noise sources contributions to SiGe:C/Si and InP/InGaAs HBT's performances
    Pacheco-Sanchez, A.
    Ramirez-Garcia, E.
    Rodriguez-Mendez, L.
    Galaz-Larios, M.
    Marquez-Beltran, C.
    Enciso-Aguilar, M.
    REVISTA MEXICANA DE FISICA, 2013, 59 (02) : 148 - 152
  • [36] A High-Efficiency E-band SiGe HBT Frequency Tripler With Broadband Performance
    Zhou, Peigen
    Chen, Jixin
    Li, Huanbo
    Hou, Debin
    Yan, Pinpin
    Yu, Chao
    Hong, Wei
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 690 - 693
  • [37] On the Large-Signal Robustness of SiGe HBT LNAs for High-Frequency Wireless Applications
    Thrivikraman, Tushar K.
    Madan, Anuj
    Cressler, John D.
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 156 - 159
  • [38] SiGe HBT Amplifiers with High Image Rejection for Quasi-millimeter-wave Frequency Range
    Masuda, Toru
    Shiramizu, Nobuhiro
    Nakamura, Takahiro
    Washio, Katsuyoshi
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 132 - 135
  • [39] Applications and processing of SiGe and SiGe:C for high-speed HBT devices
    Meyer, DJ
    Webb, DA
    Ward, MG
    Sellar, JD
    Zeng, PY
    Robinson, J
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 529 - 533
  • [40] SiGe HBT and SiGe MOSFET analysis for high-speed optical networks
    Petrosjanc, KO
    Ryabov, NI
    Torgovnikov, RA
    SMART IMAGERS AND THEIR APPLICATION, 2005, 5944 : 24 - 31
12345