Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate

被引：0
|
作者：
Yang, Weiming [1 ]
Shi, Chen [2 ]
Chen, Jianxin [2 ]
机构：
[1] Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[2] Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 04期
关键词：
7;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：503 / 508
相关论文
共 50 条
  • [21] A 16GHz ultra high-speed Si/SiGe HBT comparator
    Jensen, JC
    Larson, LE
    PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 120 - 123
  • [22] Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT
    TSIEN Peihsin
    Rare Metals, 2004, (04) : 330 - 339
  • [23] Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters
    Lopez-Gonzalez, Juan M.
    Sakalas, Paulius
    Schroeter, Michael
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (10)
  • [24] Impact of High Frequency Correlated Noise on SiGe HBT Low Noise Amplifier Design
    Shen, Pei
    Niu, Guofu
    Xu, Ziyan
    Zhang, Wanrong
    2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 125 - 128
  • [25] Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate
    Si, JJ
    Guo, LW
    Yang, QQ
    Gao, JH
    Teng, D
    Zhou, JM
    Wang, QM
    SOLID STATE COMMUNICATIONS, 1999, 112 (05) : 255 - 259
  • [26] A 2.4 GHz SiGe HBT High Voltage/High Power Amplifier
    Farmer, Thomas J.
    Darwish, Ali
    Zaghloul, Mona E.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (05) : 286 - 288
  • [27] A Si SiGe HBT timing generator IC for high-bandwidth impulse radio applications
    Rowe, D
    Pollack, B
    Pulver, J
    Chon, W
    Jett, P
    Fullerton, L
    Larson, L
    PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1999, : 221 - 224
  • [28] A 16-GHz ultra-high-speed Si-SiGe HBT comparator
    Jensen, JC
    Larson, LE
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (09) : 1584 - 1589
  • [29] Electrostatic capacitances of high-speed SiGe HBT
    Zerounian, Nicolas
    Garcia, Eloy Ramirez
    Aniel, Frederic
    Barbalat, Benoit
    Chevalier, Pascal
    Chantre, Alain
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 25 - +
  • [30] A high linearity SiGe HBT LNA for GPS receiver
    罗彦彬
    石坚
    马成炎
    甘业兵
    钱敏
    Journal of Semiconductors, 2014, 35 (04) : 96 - 101
12345