Research on improvement of the high frequency performances of SiGe HBT by the high resistivity Si substrate

被引：0
|
作者：
Yang, Weiming [1 ]
Shi, Chen [2 ]
Chen, Jianxin [2 ]
机构：
[1] Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[2] Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 04期
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页码：503 / 508
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