Intersubband transitions in InGaAsN/GaAs quantum wells

被引：0
|
作者：
Liu, W. [1 ]
Zhang, D.H. [1 ]
Fan, W.J. [1 ]
Hou, X.Y. [2 ]
Jiang, Z.M. [2 ]
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
[2] Department of Physics, Fudan University, China
来源：
Journal of Applied Physics | 2008年 / 104卷 / 05期
关键词：
III-V semiconductors;
D O I：
暂无
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摘要：
Journal article (JA)
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