Modeling the melting temperature of semiconductor nanocrystals

被引:0
|
作者
Sheng, Hongchao [1 ]
Xiao, Beibei [2 ]
Jiang, Xiaobao [1 ]
机构
[1] Jiangsu Univ Sci & Technol, Dept Mat Sci & Engn, Zhenjiang 212003, Peoples R China
[2] Jiangsu Univ Sci & Technol, Sch Energy & Power Engn, Zhenjiang 212003, Peoples R China
关键词
Size effect; Melting temperature; Semiconductor; Nanocrystals; Thermodynamics; SIZE DEPENDENCE; COHESIVE ENERGY; POINT; SHAPE; THERMODYNAMICS; NANOPARTICLES;
D O I
10.1016/j.cplett.2024.141659
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Exploring the thermal stability of semiconductor crystals at the nanoscale is of great significance for the design, fabrication, and application of modern quantum devices. In this paper, we propose a thermodynamic model to predict the melting temperature of semiconductor nanocrystals, which is in good agreement with the experimental results of Si, Bi, CdS, and CdSe. In addition, when the size decreases, the drop of melting temperature curves tends to be synchronized with the size-dependent solid/liquid interface energy and surface stress ratio gamma sl(D)/f(D), which reveals the physical origin of the decrease in the melting temperature of the semiconductor nanocrystals.
引用
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页数:4
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