Development of terahertz frequency solid state multiply sources and sensors with Schottky barrier diodes

被引:0
|
作者
机构
[1] [1,Yao, Chang-Fei
[2] Zhou, Ming
[3] Luo, Yun-Sheng
[4] Xu, Cong-Hai
[5] Kou, Ya-Nan
[6] Chen, Yi-Gang
来源
Yao, C.-F. (yaocf1982@163.com) | 1600年 / Chinese Institute of Electronics卷 / 41期
关键词
Circuit simulation - Diodes - Mixers (machinery) - Gallium arsenide - III-V semiconductors - Schottky barrier diodes - Frequency doublers;
D O I
10.3969/j.issn.0372-2112.2013.03.004
中图分类号
学科分类号
摘要
Terahertz solid state frequency multiplying sources and sensors are developed with GaAs Schottky barrier diodes and hybrid integrated circuit process. Based on physical structure of diode, high efficiency multipliers, and high sensitivity sensors, such as detectors and subharmonic mixers (SHM) are developed with the combination of electromagnetic (EM) full-wave tool and circuit simulation tool. To the 0.15THz detector, highest measured voltage sensitivity is 1600mV/mW, typical sensitivity is 600mV/mW in 0.11~0.17THz, and tangential signal sensitivity (TSS) is superior than -29dBm. To the 0.15THz frequency doubler, highest measured multiply efficiency is 7.5%, and typical efficiency is 6.0% in 0.1474~0.152THz. To the 0.18THz frequency doubler, highest measured multiply efficiency is 14.8%, and typical efficiency is 8.0% in 0.15~0.2THz. To the 0.15THz SHM, lowest measured conversion loss is 10.7dB, and typical conversion loss is 12.5dB in 0.135~0.165THz. To the 0.18THz SHM, lowest measured conversion loss is 5.8dB, and typical conversion loss is 13.5dB and 11.5dB in 0.165~0.2THz and 0.21~0.24THz, respectively.
引用
收藏
相关论文
共 50 条
  • [1] Terahertz Image Sensors Using CMOS Schottky Barrier Diodes
    Han, Ruonan
    Zhang, Yaming
    Kim, Youngwan
    Kim, Dae Yeon
    Shichijo, Hisashi
    Kenneth, K. O.
    2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2012, : 254 - 257
  • [2] Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI
    Yao Chang-Fei
    Zhou Ming
    Luo Yun-Sheng
    Lin Gang
    Li Jiao
    Xu Cong-Hai
    Kou Ya-Nan
    Wu Gang
    Wang Ji-Cai
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2014, 33 (03) : 256 - 262
  • [3] Reduced low-frequency noise Schottky barrier diodes for terahertz applications
    Suzuki, T
    Yasui, T
    Fujishima, H
    Nozokido, T
    Araki, M
    Boric-Lubecke, O
    Lubecke, VM
    Warashina, H
    Mizuno, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (09) : 1649 - 1655
  • [4] Reduced low-frequency noise Schottky barrier diodes for terahertz applications
    Suzuki, Tetsu
    Yasui, Takanari
    Fujishima, Hirotomo
    Nozokido, Tatsuo
    Araki, Minoru
    Boric-Lubecke, Olga
    Lubecke, Victor M.
    Warashina, Hideo
    Mizuno, Koji
    IEEE Transactions on Microwave Theory and Techniques, 1999, 47 (9 I): : 1649 - 1655
  • [5] Analytical Model of TeraHertz Frequency Voltage Noise in Schottky-barrier Diodes and Heterostructure Barrier Varactors
    Mahi, F. Z.
    Varani, L.
    Shiktorov, P.
    Starikov, E.
    Gruzhinskis, V.
    PIERS 2011 MARRAKESH: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2011, : 702 - 705
  • [6] SOLID STATE PARAMETRIC DEVICES (SILICON SCHOTTKY BARRIER IN MICROWAVE DIODES)
    DAY, HM
    BRADSHAW, EF
    CHEVILLE, DE
    CINDEA, T
    REPORT OF NRL PROGRESS, 1966, (JAN): : 31 - &
  • [7] Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications
    Chen, S. -M.
    Fang, Y. -K.
    Juang, F. R.
    Yeh, W. -K.
    Chao, C. -P.
    Tseng, H. -C.
    THIN SOLID FILMS, 2010, 519 (01) : 471 - 474
  • [8] Homoepitaxial GaN terahertz planar Schottky barrier diodes
    Liang, Shixiong
    Gu, Guodong
    Guo, Hongyu
    Zhang, Lisen
    Song, Xubo
    Lv, Yuanjie
    Bu, Aimin
    Feng, Zhihong
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (48)
  • [9] Future developments for Terahertz Schottky barrier mixer diodes
    Grüb, A.
    Simon, A.
    Krozer, V.
    Hartnagel, H.L.
    Archiv fur Elektrotechnik Berlin, 1993, 77 (01): : 57 - 59
  • [10] A Review of Terahertz Sources Based on Planar Schottky Diodes
    KOU Wei
    LIANG Shixiong
    ZHOU Hongji
    DONG Yazhou
    GONG Sen
    YANG Ziqiang
    ZENG Hongxin
    Chinese Journal of Electronics, 2022, 31 (03) : 467 - 487