Impact of dynamic stress on reliability of nanoscale n-channel metal-oxide-semiconductor field-effect transistors with SiON gate dielectric operating in a complementary metal-oxide-semiconductor inverter at elevated temperature

被引：0
|
作者：
Lee, Nam-Hyun [1 ]
Kim, Hyung-Wook [2 ]
Kang, Bongkoo [1 ]
机构：
[1] Department of Electronic and Electrical Engineering, POSTECH, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Korea, Republic of
[2] Memory Division, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 2 PART 2期
关键词：
CMOS device scaling - Complementary metal oxide semiconductors - Drain-induced barrier lowering - Elevated temperature - Frequency independent - Hot carrier effect - Off-state stress - SiON gate dielectrics;
D O I：
02BC13
中图分类号：
学科分类号：
摘要：
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