Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

被引：0

作者：

Tomita, Kazuyoshi ^{[1
]}

Itoh, Kenji ^{[1
]}

Ishiguro, Osamu ^{[1
]}

Kachi, Tetsu ^{[1
]}

Sawaki, Nobuhiko ^{[2
]}

机构：

[1] Toyota Central R and D Laboratories, Inc., Nagakute, Aichi 480-1192, Japan

[2] Department of Electronics, Akasaki Research Center, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan

来源：

| 1600年 / American Institute of Physics Inc.卷 / 104期

关键词：

11;

D O I：

暂无

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学科分类号：

摘要：

Journal article (JA)

引用

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