Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer

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作者：
Tomita, Kazuyoshi [1 ]
Itoh, Kenji [1 ]
Ishiguro, Osamu [1 ]
Kachi, Tetsu [1 ]
Sawaki, Nobuhiko [2 ]
机构：
[1] Toyota Central R and D Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
[2] Department of Electronics, Akasaki Research Center, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
来源：
| 1600年 / American Institute of Physics Inc.卷 / 104期
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