Data retention characteristics for gate oxide schemes in sub-50nm saddle-fin transistor dynamic-random-access-memory technology

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Semiconductor R and D Division, Hynix Semiconductor Inc., Icheon, Gyeonggi-do 467-701, Korea, Republic of [1 ]
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Jpn. J. Appl. Phys. | / 4 PART 2卷
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04DD01
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Fins (heat exchange)
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