Data retention characteristics for gate oxide schemes in sub-50nm saddle-fin transistor dynamic-random-access-memory technology

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作者：
Semiconductor R and D Division, Hynix Semiconductor Inc., Icheon, Gyeonggi-do 467-701, Korea, Republic of [1 ]
不详 [2 ]
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来源：
Jpn. J. Appl. Phys. | / 4 PART 2卷
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Compendex;
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04DD01
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摘要：
Fins (heat exchange)
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