The potential and the drawbacks of underlap single-gate ultrathin SOI MOSFET

被引：0
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作者：
Yoshioka, Yoshimasa [1 ]
Hamada, Mitsuo [1 ]
Omura, Yasuhisa [1 ]
机构：
[1] Grad. School of Eng., Kansai University, 3-3-35, Yamate-cho, Suita, Osaka, 564-8680, Japan
来源：
Technology Reports of Kansai University | 2008年 / 50卷
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页码：17 / 27
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