Progress on Development of Highly Sensitive Tunnel Magneto-resistive Sensor

被引：0
|
作者：
Oogane, Mikihiko [1 ,2 ]
Nakano, Takafumi [1 ]
Fujiwara, Kosuke [3 ]
机构：
[1] Graduate School of Engineering, Tohoku University, 6-6-5, Aramaki Aza Aoba, Aoba-ku, Sendai,980-8579, Japan
[2] CSIS, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai,980-8577, Japan
[3] Spin Sensing Factory Corp., 468-1, Aramaki Aza Aoba, Aoba-ku, Sendai,980-0845, Japan
来源：
IEEJ Transactions on Fundamentals and Materials | 2024年 / 144卷 / 08期
关键词：
Magnetic materials - Magnetic sensors - Structural optimization;
D O I：
10.1541/ieejfms.144.306
中图分类号：
学科分类号：
摘要：
We have developed a highly sensitive tunnel magneto-resistive (TMR) sensor. A sensitivity has been dramatically improved by development of soft-magnetic materials and optimization of structure of TMR devices. In addition, 1/f noise was also decreased by improvement of integration techniques and reduction in defects of tunneling barrier layer. Because of dramatic improvement of the sensitivity and 1/f noise, we have successfully achieved the magnetic field resolution of 0.4 pT/Hz0.5 at 1 Hz. We have also demonstrated bio-magnetic field measurement at RT using the improved TMR sensors. © 2024 The Institute of Electrical Engineers of Japan.
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页码：306 / 311
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