In situ photocurrent measurements of thin-film semiconductors during plasma-enhanced chemical vapor deposition

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机构：
[1] Nunomura, Shota
[2] Sakata, Isao
[3] Kondo, Michio
来源：
| 2013年 / Japan Society of Applied Physics卷 / 06期
关键词：
Photocurrents - Amorphous silicon - Plasma CVD - Amorphous films;
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摘要：
Time evolutions of photocurrents in hydrogenated amorphous silicon films under plasma-enhanced chemical vapor deposition have been measured. The photocurrent is gradually increased with growth time, and the corresponding photoconductivity is improved. The improvement is dependent on the temperature, and more pronounced during postgrowth annealing. The postgrowth annealing plays an important role in improving the transport of photoexcited carriers. © 2013 The Japan Society of Applied Physics.
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