In situ photocurrent measurements of thin-film semiconductors during plasma-enhanced chemical vapor deposition

被引：0
|
作者：
机构：
[1] Nunomura, Shota
[2] Sakata, Isao
[3] Kondo, Michio
来源：
| 2013年 / Japan Society of Applied Physics卷 / 06期
关键词：
Photocurrents - Amorphous silicon - Plasma CVD - Amorphous films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Time evolutions of photocurrents in hydrogenated amorphous silicon films under plasma-enhanced chemical vapor deposition have been measured. The photocurrent is gradually increased with growth time, and the corresponding photoconductivity is improved. The improvement is dependent on the temperature, and more pronounced during postgrowth annealing. The postgrowth annealing plays an important role in improving the transport of photoexcited carriers. © 2013 The Japan Society of Applied Physics.
引用
收藏
相关论文
共 50 条
  • [31] Anomalous Anderson Weak Localization of Graphite Thin Film Fabricated by Plasma-Enhanced Chemical Vapor Deposition
    Yamada, Shigeki
    Yoshimura, Hirofumi
    Tachibana, Masaru
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2010, 79 (05)
  • [32] Deposition of TiO2 thin films by plasma-enhanced chemical vapor deposition
    Li, WJ
    Zhao, JF
    Zhao, XL
    Cai, BC
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 398 - 401
  • [33] Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition
    Henley, WB
    Sacks, GJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (03) : 1045 - 1050
  • [34] Structural refinement of SnO2 thin film prepared by plasma-enhanced chemical vapor deposition
    Kim, YI
    Nahm, SH
    Jung, MJ
    MATERIALS LETTERS, 2003, 57 (22-23) : 3653 - 3659
  • [35] Plasma composition during plasma-enhanced chemical vapor deposition of carbon nanotubes
    Bell, MS
    Lacerda, RG
    Teo, KBK
    Rupesinghe, NL
    Amaratunga, GAJ
    Milne, WI
    Chhowalla, M
    APPLIED PHYSICS LETTERS, 2004, 85 (07) : 1137 - 1139
  • [36] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors
    Hiramatsu, Masato
    Kimura, Yoshinobu
    Jyumonji, Masayuki
    Nishitani, Mikihiko
    Matsumura, Masakiyo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (6 A): : 3813 - 3816
  • [37] Formation of microcrystalline silicon film by using plasma-enhanced chemical vapor deposition
    Lee, JY
    Yoon, JH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (02) : 423 - 426
  • [38] Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application
    Tan, CS
    Fan, A
    Chen, KN
    Reif, R
    APPLIED PHYSICS LETTERS, 2003, 82 (16) : 2649 - 2651
  • [39] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors
    Hiramatsu, M
    Kimura, Y
    Jyumonji, M
    Nishitani, M
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3813 - 3816
  • [40] Parametric study and residual gas analysis of large-area silicon-nitride thin-film deposition by plasma-enhanced chemical vapor deposition
    Xiang, Dong
    Xia, Huanxiong
    Yang, Wang
    Mou, Peng
    VACUUM, 2019, 165 : 172 - 178
12345