P-type doping of MoS2 thin films using Nb

被引：214

作者：

Laskar, Masihhur R. ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

Ma, Lu ^{[2
]}

Lee II, Edwin W. ^{[1
]}

Lee, Choong Hee ^{[1
]}

Kent, Thomas ^{[3
]}

Yang, Zihao ^{[1
]}

Mishra, Rohan ^{[4
,5
]}

Roldan, Manuel A. ^{[5
,6
]}

Idrobo, Juan-Carlos ^{[7
]}

Pantelides, Sokrates T. ^{[4
,5
,8
]}

Pennycook, Stephen J. ^{[9
]}

Myers, Roberto C. ^{[1
,3
]}

Wu, Yiying ^{[2
]}

Rajan, Siddharth ^{[1
,3
]}

机构：

[1] Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, United States

[2] Department of Chemistry, Ohio State University, Columbus, OH 43210, United States

[3] Department of Material Science and Engineering, Ohio State University, Columbus, OH 43210, United States

[4] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States

[5] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States

[6] Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040, Spain

[7] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States

[8] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States

[9] Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States

来源：

Applied Physics Letters | 2014年 / 104卷 / 09期

关键词：

Molybdenum compounds;

D O I：

10.1063/1.4867197

中图分类号：

学科分类号：

摘要：

引用

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