P-type doping of MoS2 thin films using Nb

被引：214
|
作者：
Laskar, Masihhur R. [1 ]
Nath, Digbijoy N. [1 ]
Ma, Lu [2 ]
Lee II, Edwin W. [1 ]
Lee, Choong Hee [1 ]
Kent, Thomas [3 ]
Yang, Zihao [1 ]
Mishra, Rohan [4 ,5 ]
Roldan, Manuel A. [5 ,6 ]
Idrobo, Juan-Carlos [7 ]
Pantelides, Sokrates T. [4 ,5 ,8 ]
Pennycook, Stephen J. [9 ]
Myers, Roberto C. [1 ,3 ]
Wu, Yiying [2 ]
Rajan, Siddharth [1 ,3 ]
机构：
[1] Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, United States
[2] Department of Chemistry, Ohio State University, Columbus, OH 43210, United States
[3] Department of Material Science and Engineering, Ohio State University, Columbus, OH 43210, United States
[4] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[5] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
[6] Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040, Spain
[7] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
[8] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
[9] Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States
来源：
Applied Physics Letters | 2014年 / 104卷 / 09期
关键词：
Molybdenum compounds;
D O I：
10.1063/1.4867197
中图分类号：
学科分类号：
摘要：
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