Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure

被引：0
|
作者：
Lu, Mao-Wang [1 ]
Chen, Sai-Yan [1 ]
Cao, Xue-Li [1 ]
Zhang, An-Qi [1 ]
机构：
[1] Guilin Univ Technol, Coll Phys & Elect Informat Engn, Guilin 541004, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Electrons; Electric potential; Spintronics; Vectors; Stars; Microstructure; Electric fields; Layered semiconductor quantum microstructure; Rashba spin-orbit coupling; dynamic spin polarization; spatial electron-spin splitter; BEAM SPLITTER; NANOSTRUCTURE;
D O I：
10.1109/LED.2024.3454235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Goos-Hanchen effect of electrons in a layered semiconductor quantum microstructure is explored. Thanks to Rashba spin-orbit coupling, GH shifts depend obviously on electron spins, causing the dynamic spin polarization in the spatial domain. Besides, this spin polarization can be modulated by the interfacial electric field or the layer thickness. These interesting findings may be helpful for design of the spatial electron-spin splitter.
引用
收藏
页码：2066 / 2069
页数：4
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