The δ-doping manipulable spatial electron-spin splitter based on single-layered semiconductor nanostructure

Introducing a delta-potential by atomic-layer doping technology, we theoretically explore its effect on Goos-Ha<spacing diaeresis>nchen (GH) effect for electrons in a single-layered semiconductor nanostructure. Due to spin-orbit coupling, GH displacement of electrons still relies on its spins, which gives rise to an appreciable electron-spin polarization effect. Moreover, spin-dependent GH shifts can be manipulated by changing weight or position of delta-doping. Therefore, a structurally-controllable spatial electron-spin splitter can be developed for semiconductor spintronic device applications.