Control of vapor transport process of large size ZnO single crystal growth

被引：0
|
作者：
Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2007年 / 6卷 / 869-872期
关键词：
Calculations - Crystal growth - Growth kinetics - Growth rate - Semiconducting zinc compounds - Single crystals - Thermal gradients;
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暂无
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摘要：
The transport, kinetics, and growth process of ZnO single crystal fabricated by the chemical vapor transport method (CVT) are studied through analyzing the effect of temperature gradient and calculating the transport efficiency. The factors which limit growth rate and crystal quality are discussed within the framework of the theories of vapor-solid phase crystallization and growth kinetics. Finally, we identify the CVT growth mechanism of ZnO, which is supported by our experimental results of high quality, large ZnO single crystals.
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