Control of vapor transport process of large size ZnO single crystal growth

被引：0
|
作者：
Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2007年 / 6卷 / 869-872期
关键词：
Calculations - Crystal growth - Growth kinetics - Growth rate - Semiconducting zinc compounds - Single crystals - Thermal gradients;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The transport, kinetics, and growth process of ZnO single crystal fabricated by the chemical vapor transport method (CVT) are studied through analyzing the effect of temperature gradient and calculating the transport efficiency. The factors which limit growth rate and crystal quality are discussed within the framework of the theories of vapor-solid phase crystallization and growth kinetics. Finally, we identify the CVT growth mechanism of ZnO, which is supported by our experimental results of high quality, large ZnO single crystals.
引用
收藏
相关论文
共 50 条
  • [21] ZnO Nanostructures in Vapor Transport Growth Method
    Mohan, Rajneesh
    Kim, Gui-Sik
    Kim, Sang-Jae
    SCIENCE OF ADVANCED MATERIALS, 2014, 6 (02) : 336 - 342
  • [22] Control of ZnO Nanostructures via Vapor Transport
    Modeshia, Deena R.
    Dunnill, Charles W.
    Suzuki, Yuji
    Al-Ghamdi, Ahmed A.
    El-Mossalamy, Elsayed H.
    Obaid, Abdullah Y.
    Basahel, Sulaiman N.
    Alyoubi, Abdulrahman O.
    Parkin, Ivan. P.
    CHEMICAL VAPOR DEPOSITION, 2012, 18 (10-12) : 282 - 288
  • [23] Influence of sublimation surface on mass transport in AlN crystal growth by physical vapor transport process
    Fu, Danyang
    Wang, Qikun
    Zhang, Gang
    Li, Zhe
    Huang, Jiali
    Wang, Jiang
    Wu, Liang
    AIP ADVANCES, 2022, 12 (05)
  • [24] Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process
    Wang, Qikun
    Huang, Jiali
    Fu, Danyang
    He, Guangdong
    Lei, Dan
    Wu, Liang
    JOURNAL OF CRYSTAL GROWTH, 2019, 515 : 21 - 25
  • [25] Crystal Growth by Chemical Vapor Transport: Process Screening by Complementary Modeling and Experiment
    Heinemann, Robert
    Schmidt, Peer
    CRYSTAL GROWTH & DESIGN, 2020, 20 (09) : 5986 - 6000
  • [26] Process parameters of large single crystal graphene prepared by chemical vapor deposition
    Han Lin-Zhi
    Zhao Zhan-Xia
    Ma Zhong-Quan
    ACTA PHYSICA SINICA, 2014, 63 (24) : 248103
  • [27] SINGLE-CRYSTAL AND FILM GROWTH OF ACTINIDE PNICTIDES BY CHEMICAL VAPOR TRANSPORT
    CALESTANI, G
    SPIRLET, JC
    MULLER, W
    JOURNAL DE PHYSIQUE, 1979, 40 : 106 - 107
  • [28] Growth and morphology of β-FeSi2 single crystal with chemical vapor transport
    Zhao, JH
    Li, YC
    Liu, RP
    Zhang, XY
    Zhou, ZH
    Wang, CY
    Xu, YF
    Wang, WK
    CHINESE PHYSICS LETTERS, 1999, 16 (03): : 208 - 210
  • [29] PREPARATION AND SINGLE-CRYSTAL GROWTH OF PROTOACTINIUM ARSENIDES BY CHEMICAL VAPOR TRANSPORT
    CALESTANI, G
    SPIRLET, JC
    REBIZANT, J
    MULLER, W
    JOURNAL OF THE LESS-COMMON METALS, 1979, 68 (02): : 207 - 212
  • [30] Synthesis of ZnO crystals by chemical vapor transport process
    Wei, Zhi-Ren
    Wu, Ming-Xiao
    Guo, Shu-Qing
    Gao, Ping
    Yin, Li-Jun
    Huang, Cun-Xin
    Zhang, Jin-Ping
    Zhang, Xiao-Jun
    Dong, Guo-Yi
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (05): : 1261 - 1264
12345