Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

被引：0
|
作者：
Lee, Gieop [1 ]
Cha, An-Na [1 ,2 ]
Cho, Sea [1 ]
Chung, Jeong Soo [1 ]
Moon, Young-Boo [4 ]
Ha, Jun-Seok [1 ,2 ,3 ]
机构：
[1] School of Chemical Engineering, Chonnam National University, Gwangju,61186, Korea, Republic of
[2] Energy Convergence Core Facility, Chonnam National University, Gwangju,61186, Korea, Republic of
[3] Optoelectronics Convergence Research Center, Chonnam National University, Gwangju,61186, Korea, Republic of
[4] UJL Inc., Siheung,15101, Korea, Republic of
来源：
Crystal Growth and Design | 2024年 / 24卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：205 / 213
相关论文
共 50 条
  • [41] Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
    Polyakov, A. Y.
    Smirnov, N. B.
    Shchemerov, I. V.
    Yakimov, E. B.
    Nikolaev, V. I.
    Stepanov, S. I.
    Pechnikov, A. I.
    Chernykh, A. V.
    Shcherbachev, K. D.
    Shikoh, A. S.
    Kochkova, A.
    Vasilev, A. A.
    Pearton, S. J.
    APL MATERIALS, 2019, 7 (05)
  • [42] Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates
    Perkins, NR
    Horton, MN
    Bandic, ZZ
    McGill, TC
    Kuech, TF
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 243 - 248
  • [43] Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates
    Jeon, Dae-Woo
    Son, Hoki
    Hwang, Jonghee
    Polyakov, A. Y.
    Smirnov, N. B.
    Shchemerov, I. V.
    Chernykh, A. V.
    Kochkova, A. I.
    Pearton, S. J.
    Lee, In-Hwan
    APL MATERIALS, 2018, 6 (12):
  • [44] Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy
    Polyakov, A. Y.
    Nikolaev, V. I.
    Stepanov, S. I.
    Pechnikov, A. I.
    Yakimov, E. B.
    Smirnov, N. B.
    Shchemerov, I. V.
    Vasilev, A. A.
    Kochkova, A. I.
    Chernykh, A. V.
    Pearton, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (04)
  • [45] Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy
    Ema, Kentaro
    Hieda, Ryohei
    Murakarni, Hisashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (10)
  • [46] Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy
    Yakimov, Eugene B. B.
    Polyakov, Alexander Y. Y.
    Nikolaev, Vladimir I. I.
    Pechnikov, Alexei I. I.
    Scheglov, Mikhail P. P.
    Yakimov, Eugene E. E.
    Pearton, Stephen J. J.
    NANOMATERIALS, 2023, 13 (07)
  • [47] Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3
    Xiu, Xiangqian
    Zhang, Liying
    Li, Yuewen
    Xiong, Zening
    Zhang, Rong
    Zheng, Youdou
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (01)
  • [48] Homoepitaxial growth of ((1)over-bar02) β-Ga2O3 by halide vapor phase epitaxy
    Oshima, Yuichi
    Oshima, Takayoshi
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (10)
  • [49] ((3)over-bar10)-Oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations
    Xu, Wanli
    Li, Yuewen
    Li, Bin
    Xiu, Xiangqian
    Zhao, Hong
    Xie, Zili
    Tao, Tao
    Chen, Peng
    Liu, Bin
    Zhang, Rong
    Zheng, Youdou
    CRYSTENGCOMM, 2023, 25 (43) : 6044 - 6049
  • [50] GROWTH OF THICK GALLIUM OXIDE ON THE VARIOUS SUBSTRATES BY HALIDE VAPOR PHASE EPITAXY
    Kremleva, A., V
    Sharofidinov, Sh Sh
    Smirnov, A. M.
    Podlesnov, E.
    Dorogov, M., V
    Odnoblyudov, M. A.
    Bougrov, V. E.
    Romanov, A. E.
    MATERIALS PHYSICS AND MECHANICS, 2020, 44 (02): : 164 - 171
12345