Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

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作者：
Lee, Gieop [1 ]
Cha, An-Na [1 ,2 ]
Cho, Sea [1 ]
Chung, Jeong Soo [1 ]
Moon, Young-Boo [4 ]
Ha, Jun-Seok [1 ,2 ,3 ]
机构：
[1] School of Chemical Engineering, Chonnam National University, Gwangju,61186, Korea, Republic of
[2] Energy Convergence Core Facility, Chonnam National University, Gwangju,61186, Korea, Republic of
[3] Optoelectronics Convergence Research Center, Chonnam National University, Gwangju,61186, Korea, Republic of
[4] UJL Inc., Siheung,15101, Korea, Republic of
来源：
Crystal Growth and Design | 2024年 / 24卷 / 01期
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页码：205 / 213
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