Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb

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作者：
机构：
[1] Craig, A.P.
[2] Marshall, A.R.J.
[3] Tian, Z.-B.
[4] Krishna, S.
来源：
Craig, A.P. (A.craig1@lancaster.ac.uk) | 1600年 / Elsevier B.V., Netherlands卷 / 67期
基金：
英国工程与自然科学研究理事会;
关键词：
Cost effectiveness - Dark currents - Gallium arsenide - Semiconducting gallium - Semiconductor alloys - Activation energy - Photons - Infrared detectors - Thermoelectric equipment;
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